2-D oxide flakes pick up surprise electrical properties
Rice University researchers have found evidence of piezoelectricity in lab-grown, two-dimensional flakes of molybdenum dioxide.
Rice University researchers have found evidence of piezoelectricity in lab-grown, two-dimensional flakes of molybdenum dioxide.
Computers, mobile phones and all other electronic devices contain thousands of transistors linked together by thin films of metal. Scientists at Linköping University, Sweden, have developed a method that can use the electrons ...
Many industrial processes rely on thin membranes that can clean water, for example, by filtering out impurities. In recent years, a technique called atomic layer deposition (ALD) has been used to tune these membranes for ...
Yogesh Vohra, Ph.D., uses microwave-plasma chemical vapor deposition to create thin crystal films of never-before-seen materials. This effort seeks materials that approach a diamond in hardness and are able to survive extreme ...
During the progression of pulmonary hypertension, structural and functional changes in the small muscular arteries play a significant role and contribute to the disease. Bioengineers aim to develop advanced, anatomically ...
Scientists from NUST MISIS (Russia) together with colleagues from Sweden, Hungary and U.S., found a way to manufacture stable qubits that operate at room temperature, in contrast to the majority of existing analogues. This ...
FinFETs are known to be an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. It was first proposed in 1990s in order ...
In the field of 2-D electronics, the norm used to be that graphene is the main protagonist and hexagonal boron nitride (hBN) is its insulating passive support. Researchers of the Center for Multidimensional Carbon Materials ...
Step by step, scientists are figuring out new ways to extend Moore's Law. The latest reveals a path toward integrated circuits with two-dimensional transistors.
Researchers from the Hong Kong University of Science and Technology (HKUST) have reported the world's first 1.5 μm III-V lasers directly grown on the industry-standard 220 nm SOI (silicon-on-insulators) wafers without buffer, ...