Intel, Corning to Develop Extreme Ultraviolet Photomask Substrates for 32nm Node
Intel Corporation and Corning Incorporated have entered into an agreement to develop ultra low thermal expansion ULE glass photomask substrates required for Extreme Ultraviolet (EUV) technology. These substrates are needed to develop low defect EUV photomasks to enable 32nm node high-volume production using EUV lithography.
鈥淐orning has a rich history of developing innovative products and our extensive optical materials and process knowledge have positioned the ULE product as the optimal material for EUV photomask substrates,鈥� stated Jim Steiner, senior vice president and general manager, Corning Specialty Materials.
Intel鈥檚 leading position in advanced semiconductor manufacturing will provide the expertise Corning requires to respond rapidly to industry requirements. The joint development program will help to enable chip production using EUV technology starting in 2009.
鈥淭he cooperative efforts of Corning and Intel will provide the opportunity to develop ULE庐 glass substrates and position them as the material of choice for EUV photomasks,鈥� Steiner said. 鈥淲e are excited to be working with a technology leader in the semiconductor industry, and this reaffirms Corning鈥檚 commitment to develop the best optical materials available for semiconductor lithography鈥�.
鈥淒riving down EUV photomask defect levels is a critical issue for the commercialization of EUV technology. Corning and Intel plan to address the mask substrate contribution to this issue,鈥� said Janice Golda, Intel鈥檚 director of lithography. 鈥淭he development of higher-quality EUV masks, along with Intel鈥檚 related efforts in light sources, lithography equipment and new photo resists, will help create the infrastructure needed to position EUV lithography as the key technology for the future.鈥�
Lithography tools are used in chip making to 鈥減rint鈥� patterns on a silicon wafer. Today, the industry uses lithography tools that use a 193nm wavelength of light to 鈥減rint鈥� transistors as small as 50nm. That is equivalent to a painter trying to draw very fine lines using a thick brush. EUV lithography technology will use light that is only 13.5nm wavelength of light, so it can provide chip makers with a very 鈥渇ine brush鈥� to 鈥渄raw鈥� smaller transistors in the future.
EUV lithography has been identified by the International Roadmap of Semiconductor Technology as the leading technology solution for next-generation lithography after the current 193nm generation of lithography tools.
