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Phosphorus doping stabilizes high-energy polymeric nitrogen at ambient pressure

Phosphorus doping stabilizes high-energy polymeric nitrogen at ambient pressure
The lowest energy and the dynamical unstable configurations, as well as their corresponding phonon dispersion relationships. Credit: Wang XIanlong

Using first-principles calculations, a research group led by Prof. Wang Xianlong from the Hefei Institutes of Âé¶¹ÒùÔºical Science of the Chinese Academy of Sciences, found that phosphorus doping is an effective way to achieve high-energy polymeric nitrogen with black-phosphorus structure (BP-N) stable at ambient pressure.

The research results were in Matter and Radiation at Extremes.

Cubic gauche nitrogen with a diamond-like structure and BP-N with a black structure, represented by polymeric all-nitrogen materials, are a class of high-energy density materials composed entirely of N-N single bonds, but their samples synthesized under high-pressure conditions cannot be preserved under ambient pressure, which is one of the important challenges faced in this field.

In this study, researchers found that the low-pressure instability mechanism of BP-N is different from that of cg-N.

The surface instability of cg-N leads to structural instability, while the bulk of BP-N will decompose into chains at the low-pressure range. Phosphorus atom can suppress the bulk decomposition of BP-N and stabilize BP-N to 0 GPa, achieving dynamical stability through N-P dipole interaction.

In addition, the researchers calculated the optimal doping concentration and detonation performance of BP-N. This research result will actively promote the synthesis and large-scale preparation of BP-N.

More information: Guo Chen et al, Realized stable BP-N at ambient pressure by phosphorus doping, Matter and Radiation at Extremes (2024).

Citation: Phosphorus doping stabilizes high-energy polymeric nitrogen at ambient pressure (2025, March 6) retrieved 8 August 2025 from /news/2025-03-phosphorus-doping-stabilizes-high-energy.html
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